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| 2SC2216 transistor (npn) features power dissipation p cm : 300 mw (tamb=25 ) collector current i cm : 50 ma collector-base voltage v (br)cbo : 50 v operating and storage j unction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a, i e =0 50 v collector-emitter breakdown voltage v(br) ceo ic= 10 ma , i b =0 45 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 4 v collector cut-off current i cbo v cb =50 v i e =0 0.1 a emitter cut-off current i ebo v eb = 3 v, i c =0 0.1 a dc current gain h fe v ce =12.5v, i c =12.5 ma 40 140 collector-emitter saturation voltage v ce (sat) i c = 15ma, i b =1.5 ma 0.2 v bass-emitter saturation voltage v be (sat) i c = 15ma, i b =1.5 ma 1.5 v transition frequency f t v ce =12.5 v, i c =12.5ma f = 100 mhz 300 mhz 1 2 3 to92 1. base 2. emitter 3. collector 2SC2216 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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